Degradation Mechanism of Pressure-Assisted Sintered Silver by Thermal Shock Test

This paper investigates the degradation mechanism of pressure-sintered silver (s-Ag) film for silicon carbide (SiC) chip assembly with a 2-millimeter-thick copper substrate by means thermal shock test (TST). Two different types paste, nano-sized paste (NP) and nano-micron-sized (NMP), were used to sinter at 300 °C under pressure 60 MPa. The mean porosity (p) NP MNP s-Ag films was 2.4% 8%, respectively. pore shape almost spherical, whereas NMP had an irregular resembling peanut shell. After performing TST temperatures ranging from ?40 150 °C, scanning acoustic tomography (SAT) results suggested that delamination occurs edge assembly, faster than NM assembly. showed random delamination, indicating speed varies place place. difference in fracture is discussed based on cross-sectional electron microscope (SEM) observation after plastic strain distribution estimated finite element analysis (FEA) considering configuration.